The World’s Highest-Capacity NAND Flash Memory
The interdependent, growing demands of mobile computing and data centers continue to drive the need for high-capacity, high-performance NAND flash technology. With planar NAND nearing its practical scaling limits, delivering to those requirements has become more difficult with each generation. Enter our new 3D NAND technology, which uses an innovative process architecture to provide 3X the capacity of planar NAND technologies while providing better performance and reliability.
How Our 3D NAND Works
We’re the first to employ floating gate cell technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage tiers to achieve the highest-capacity NAND die available today: 256Gb multilevel cell (MLC) and 384Gb triple-level cell (TLC) 3D NAND.
This vertical approach lets us expand the size of each 3D NAND cell—the lithography is actually larger than our latest planar NAND. The larger NAND cells improve both performance and endurance to the point where we expect our MLC 3D NAND parts will meet or exceed the endurance rates of our 20nm NAND—and our TLC 3D NAND will satisfy demanding data center storage applications.
How 3D NAND Enables Your Innovation
Our 3D NAND solutions will help bring significant performance, power, and capacity advantages to your storage application. 3D NAND lets you:
-Pack in More Capacity
Get 3 times the capacity of existing NAND products—enough to enable 3.5TB gum stick-sized SSDs or more than 10TB in standard 2.5-inch SSDs.
Achieve significantly higher read/write bandwidth and I/O speeds, as well as improved random read performance, thanks to our 3D NAND’s fast 4K read mode.
Reduce power consumption significantly in standby mode thanks to 3D NAND’s new sleep mode features that cut power to inactive NAND die (even when other die in the same package are active).
ES samples of our 3D NAND will be available in 3Q15 with full production beginning in 4Q15.